Overview
Description
This device is part of a series of downconverting mixers covering all Universal Terrestrial Radio Access (UTRA) bands. The F1100 dual-channel device operates with a single 5V supply. It is optimized for operation in a multi-carrier base station receiver for RF bands from 698MHz to 915MHz with high-side injection. IF frequencies from 150MHz to 450MHz are supported. Nominally, the device offers +41dBm output IP3 with 350mA of ICC.
A member of the Zero-Distortion™ family, this RF to IF mixer reduces distortion for improved SNR while simultaneously reducing power consumption.
Features
- Dual path for diversity systems
- Ideal for multi-carrier systems
- MIMO friendly: -6dBm min LO drive
- 9dB gain
- Ultra-linear: +41dBm IP3O (350MHz IF)
- Low NF ~10dB
- 200Ω output impedance
- Ultra-high +13dBm P1dBI
- Pin-compatible with existing solutions
- 6mm x 6mm 36-pin package
- Power Down mode
- Standard mode: ICC = 350mA
Comparison
Applications
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 1.54 MB | |
| Product Change Notice | PDF 674 KB | |
| Guide | PDF 2.24 MB | |
| Product Brief | PDF 1.12 MB | |
| Product Change Notice | PDF 39 KB | |
| Product Change Notice | PDF 22 KB | |
| Product Change Notice | PDF 35 KB | |
| Product Change Notice | PDF 33 KB | |
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Design & Development
Available Modular Designs by X-Microwave: XM-A7D9-0409D Mixer
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| VFQFPN | 36 | I | Yes | Tray | 1 | 4.353 | Get Samples, | |
| VFQFPN | 36 | I | Yes | Reel | 1 |
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- Cart icon to the right of the chip icon: Indicates that samples are available for this product
Videos & Training
IDT RF Product Benefits Overview
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
Video List
