Evaluation Board for the F1180 Dual Path RF to IF Mixer
The F1180EVB is a fully populated evaluation board that allows the customer to easily evaluate the F1180 Dual Path RF to IF Mixer.
Overview
Description
The F1180 RF front-end offers 16.5dB gain with 3.5dB NF and +38dBm OIP3 performance at 2100MHz. The digital step attenuator provides 30dB adjustment range in 2dB steps via the SPI interface controller. For strong signal conditions, each RF amplifier can be configured to be internally bypassed via the SPI interface. The RF front-end output and mixer input signals are bonded to separate pins to allow interstage
image-reject filtering.
Each of the dual mixer paths provide 8.2dB power gain, 10.5dB NF and +35dBm OIP3 performance. An external LO signal is applied to the mixer LO port. This device is packaged in a 7 × 7 mm 48-VFQFPN with 50Ω single-ended RF and LO inputs, and 200Ω differential IF output impedance for ease of integration.
Features
- Dual path for MIMO systems
- RF: 1400MHz to 2700MHz
- LO: 1350MHz to 2900MHz
- IF: 25MHz to 400MHz
- Bypassable RF amplifiers for blockers
- 16.5dB RF front-end power gain
- +38dBm RF front-end OIP3 (Bypass OFF)
- +40dBm RF front-end OIP3 (Bypass ON)
- 3.5dB front-end NF at 2100MHz
- 8.2dB mixer power gain
- +35dBm mixer OIP3
- 30dB gain control range, 2dB steps
- ICC = 365mA
- 7 × 7 mm 48-VFQFPN package
Comparison
Applications
Documentation
= Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 1.75 MB | |
| Guide | PDF 2.24 MB | |
| Product Change Notice | PDF 550 KB | |
| Product Brief | PDF 1.12 MB | |
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Design & Development
Boards & Kits
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| VFQFPN | 48 | I | Yes | Tray | 1 | Get Samples, | |
| VFQFPN | 48 | I | Yes | Reel | 1 |
Tips for Using This Parametric Table:
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- Multiselect checkboxes at beginning of each row in table: Select these checkboxes to compare products against each other
- Document icon next to product name in row: View the featured document for this product
- Chip icon next to the right of the document icon in row: View the block diagram for this product
- Cart icon to the right of the chip icon: Indicates that samples are available for this product
Videos & Training
IDT RF Product Benefits Overview
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
Video List