Evaluation Board for High Reliability SP2T RF Switch F2912
The F2912EVBI is the Evaluation Board for High Reliability SP2T RF Switch F2912.
Overview
Description
The IDT F2912 is a high reliability, low insertion loss 50Ω SPDT (SP2T) absorptive RF switch designed for a multitude of wireless and other RF applications. This device covers a broad frequency range from 0.009 MHz to 9000 MHz. In addition to providing low insertion loss, the F2912 also delivers excellent linearity and isolation performance while providing 50 ohm terminations to the unused RF input port.
The F2912 uses a single positive supply voltage of 3.3V supporting three states using either 3.3 V or 1.8 V user-selectable control voltage. An added feature includes a Mode CTL pin allowing the user to control the device with either 1-pin or two-pin control.
Features
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Very low insertion loss: 0.45 dB @ 1 GHz
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High Input IP3: +65 dBm
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RF1 to RF2 Isolation: 72 dB @ 1 GHz
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1-pin or 2-pin device control option
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Low DC current; 50 µA using 3.3 V logic
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Single positive supply voltage: 3.3 V
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3.3 V or 1.8 V user-selectable control logic
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Operating temperature -55°C to +125°C
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4x4 20-pin TQFN package
Comparison
Applications
Documentation
= Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 2.18 MB | |
| Guide | PDF 2.24 MB | |
| Report | PDF 517 KB | |
| Product Brief | PDF 438 KB | |
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Design & Development
Boards & Kits
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| VFQFPN | 20 | I | Yes | Tray | 1 | 2.182 | Get Samples, | |
| VFQFPN | 20 | I | Yes | Reel | 1 | 2.258 |
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- Cart icon to the right of the chip icon: Indicates that samples are available for this product
Videos & Training
IDT RF Product Benefits Overview
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
Video List