Evaluation Board for High Reliability SP5T Absorptive RF Switch
The F2915EVBI is a fully populated evaluation board which allows the customer to easily evaluate the F2915 RF switch.
“Thru” calibration connectors are conveniently...
Overview
Description
The F2915 is a high reliability, low insertion loss, 50Ω SP5T absorptive RF switch designed for a wide range of wireless and other RF applications. This device covers a broad frequency range from 50MHz to 8000MHz. In addition to providing low insertion loss, the F2915 also delivers excellent linearity and isolation performance while providing a 50Ω termination to the unused RF ports. The F2915 also includes a patent-pending constant impedance (Kz) feature. Kz improves hot switching ruggedness, minimizes LO pulling in VCOs, and reduces phase and amplitude variations in distribution networks. It is also ideal for dynamic switching/selection between two or more amplifiers while avoiding damage to upstream/downstream sensitive devices such as PAs and ADCs.
The F2915 uses a single positive supply voltage supporting three logic control pins using either 3.3V or 1.8V control logic. Connecting a negative voltage to pin 20 disables the internal negative voltage generator and becomes the negative supply.
Features
- Five symmetric broadband, absorptive RF ports
- Constant Impedance, Kz, feature
- High-performance RF
- Isolation of 50dB at 2700MHz
- Insertion Loss of 1.2dB at 2700MHz
- High continuous RF CW power handling
- Selected RF path: 33dBm
- Terminated RF path: 27dBm
- High linearity:
- IIP2 of 114dBm
- IIP3 of 60dBm
- Single 2.7V to 5.50V supply voltage
- External Negative Supply Option
- 3.3V and 1.8V compatible control logic
- Operating temperature -40 °C to +105 °C
- 4mm x 4mm 24-pin QFN package
Comparison
Applications
Documentation
= Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 955 KB | |
| Guide | PDF 2.24 MB | |
| Product Change Notice | PDF 768 KB | |
| Product Brief | PDF 438 KB | |
| Product Change Notice | PDF 36 KB | |
| Product Change Notice | PDF 667 KB | |
| Product Brief | PDF 249 KB | |
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Design & Development
Boards & Kits
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| VFQFPN | 24 | K | Yes | Switch | Tray | 1 | 4.266 | Get Samples, | |
| VFQFPN | 24 | K | Yes | Switch | Reel | 1 |
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Videos & Training
IDT RF Product Benefits Overview
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
Video List
News & Blog Posts
| News | Oct 20, 2015 |
