Evaluation Board for F0453B Switch / LNA (Copy)
The F0453BEVB is a fully populated test board enabling easy evaluation of the F0453B Switch / LNA performance.
Featured Documents:
Overview
Description
The F0453B is an integrated dual-path RF front-end consisting of an RF switch and two gain stages with 6dB gain control used in the analog front-end receiver of an Active Antenna System (AAS). The F0453B supports frequencies from 3300MHz to 4000MHz.
The F0453B provides 34.5dB gain with +23dBm OIP3, +15dBm output P1dB, and 1.35dB noise figure at 3500MHz. Gain is reduced 6dB in a single step with a maximum settling time of 31ns. The device uses a single 3.3V supply and 130mA of IDD.
The F0453B is offered in a 5mm x 5mm x 0.8mm, 32-LGA package with 50Ω input and output amplifier impedances for ease of integration into the signal path.
Features
- Gain at 3500MHz
- 34.5dB typical in High Gain Mode
- 28.5dB typical in Low Gain Mode
- 1.35dB NF at 3500MHz
- +23dBm OIP3 at 3500MHz
- OP1dB at 3500MHz
- +15dBm in High Gain Mode
- +14dBm in Low Gain Mode
- 50Ω single-ended input/output amplifier impedances
- IDD = 130mA
- Independent Standby Mode for power savings
- Supply voltage: +3.15V to +3.45V
- 5mm × 5mm, 32-LGA package
- -40 °C to +105 °C exposed pad operating temperature range
Comparison
Applications
- Multi-mode/Multi-carrier receivers
- 4.5G (LTE Advanced)
- 5G band 42 and 43
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 2.64 MB | |
| Guide | PDF 2.24 MB | |
| End Of Life Notice | PDF 1.11 MB | |
| End Of Life Notice | PDF 1.07 MB | |
| Product Change Notice | PDF 666 KB | |
| Application Note | PDF 520 KB | |
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Design & Development
Software & Tools
Boards & Kits
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| LGA | 32 | K | Yes | Tray | 3 | ||
| LGA | 32 | K | Yes | Reel | 3 |
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Videos & Training
IDT RF Product Benefits Overview
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
Video List
