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Overview

Description

The radiation hardened IS-2100ARH, IS-2100AEH are high-frequency, 130V half-bridge N-Channel MOSFET driver ICs, which are functionally similar to industry-standard 2110 types. The low-side and high-side gate drivers are independently controlled. This gives the user maximum flexibility in dead time selection and driver protocol. In addition, the devices have on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from single event upsets (SEUs).

Features

  • Electrically screened to DLA SMD # 5962-99536
  • QML qualified per MIL-PRF-38535 requirements
  • Radiation environment
  • Maximum total dose: 300krad(Si)
  • DI RSG process provides latch-up immunity
  • SEU rating: 82MeV/mg/cm2
  • Vertical device architecture reduces sensitivity to low dose rates
  • Bootstrap supply maximum voltage to 150V
  • Drives 1000pF load at 1MHz with rise and fall times of 30ns (typical)
  • 1.5A (typical) peak output current
  • Independent inputs for non-half bridge topologies
  • Low DC power consumption: 60mW (typical)
  • Operates with VDD = VCC over 12V to 20V range
  • Low-side supply undervoltage protection

Comparison

Applications

  • High-frequency switch-mode power supplies
  • Drivers for inductive loads
  • DC motor drivers

Documentation

Type Title Date
Datasheet PDF 252 KB
Brochure PDF 467 KB
Price Increase Notice PDF 360 KB
Other
Report PDF 386 KB
Report PDF 357 KB
Report PDF 171 KB
Application Note PDF 338 KB
Application Note PDF 224 KB
9 items

Design & Development

Models

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Diagram of ECAD Models

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