Features
- Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
- ±1% reference voltage over line, temperature, and radiation
- Integrated MOSFETs 31mΩ PFET/21mΩ NFET
- 95% peak efficiency
- Externally adjustable loop compensation
- Supports DDR applications (VTT tracks VDDQ/2)
- Buffer amplifier for generating VREF voltage
- 3A current sinking capability
- Grounded lid eliminates charge build up
- IMON pin for output current monitoring
- Adjustable analog soft-start
- Diode emulation for increased efficiency at light loads
- 500kHz or 300kHz operating frequency synch wording
- Monotonic start-up into prebiased load
- Full military temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
- Radiation tolerance
- High dose rate (50-300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s): 100krad(Si)*
* Limit established by characterization. - SEE hardness
- SEB and SEL LETTH: 86.4MeV•cm2/mg
- SET at LET 86.4MeV•cm2/mg: < ±3% ΔVOUT
- SEFI LETTH: 60MeV•cm2/mg
- Electrically screened to DLA SMD 5962-14203
Description
Support is limited to customers who have already adopted these products.
The ISL70003SEH is a radiation and SEE hardened synchronous buck regulator capable of operating over an input voltage range of 3. 0V to 13. 2V. With integrated MOSFETs, this highly efficient single chip power solution provides a tightly regulated output voltage that is externally adjustable from 0. 6V to ~90% of the input voltage. Continuous output load current capability is 6A for TJ ≤ +125°C and 3A for TJ ≤ +150°C. The ISL70003SEH uses voltage mode control architecture with feed-forward and switches at a selectable frequency of 500kHz or 300kHz. Loop compensation is externally adjustable to allow for an optimum balance between stability and output dynamic performance. The internal synchronous power switches are optimized for high efficiency and excellent thermal performance. The chip features two logic-level disable inputs that can be used to inhibit pulses on the phase (LXx) pins in order to maximize efficiency based on the load current. The ISL70003SEH also supports DDR applications and contains a buffer amplifier for generating the VREF voltage. High integration, best in class radiation performance and a feature-filled design make the ISL70003SEH an ideal choice to power many of today's small form-factor applications.
Applications
- FPGA, CPLD, DSP, CPU Core and I/O supply voltages
- DDR memory supply voltages
- Low-voltage, high-density distributed power systems
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pkg. Dimensions (mm) | DLA SMD | Pb (Lead) Free | Pb Free Category | MOQ | Temp. Range (°C) | CAGE code |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL70003SEHF/PROTO | Obsolete | N/A | Out of Stock | Contact | CQFP | 64# | Tray | Not Applicable | 14.1 x 14.1 x 2.29 | Exempt | Gold Plate over compliant Undercoat-e4 | 1 | -55 to +125°C | 34371 | |
| ISL70003SEHFE/PROTO | Obsolete | N/A | Out of Stock | Contact | CQFP | 64# | Tray | Not Applicable | 14.1 x 14.1 x 0.00 | Exempt | Gold Plate over compliant Undercoat-e4 | 1 | -55 to +125°C | 34371 | |
| ISL70003SEHVF | Obsolete | N/A | Out of Stock | Contact | CQFP | 64# | Tray | Not Applicable | 14.1 x 14.1 x 2.29 | 5962-14203 | Exempt | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C | 34371 |
| ISL70003SEHVFE | Obsolete | N/A | Out of Stock | Contact | CQFP | 64# | Tray | Not Applicable | 14.1 x 14.1 x 0.00 | 5962-14203 | Exempt | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C | 34371 |
| ISL70003SEHVX | Obsolete | N/A | Out of Stock | RoHS:EN RoHS:JA | DIE | 5962-14203 | No | 10 | -55 to +125°C | 34371 |
Filters
Applied Filters
- Model - iSimRelated Files:
- White PaperPDF 254 KB using-a-switching-regulator-as-vtt-terminator Aug 10, 2018DDR memory adoption in satellite systems demands a robust VTT rail solution. The ISL70003SEH, a radiation-hardened sync buck regulator, meets this need with superior performance under all radiation conditions. Designed for VTT termination and VREF tracking, it enables DDR benefits in space without extra shielding or testing, ensuring reliable, class-leading power management for mission life.
- Model - SPICEZIP 76 KB isl70003seh-pspice-files Nov 17, 2017
- Manual - Development ToolsPDF 912 KB isl70003asehev2z-user-guide Oct 20, 2017
- End Of Life NoticePDF 297 KB PLC17007A Feb 21, 2017
- End Of Life NoticePDF 292 KB PLC17007 Feb 15, 2017
- ReportPDF 398 KB isl70003seh-neutron-test-report Jun 18, 2015
- Application NotePDF 304 KB an1947 Jan 05, 2009AI-generated Summary: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages from improper use, and restricts unauthorized modifications. Products are categorized into Standard and High Quality grades with specific application scopes. Users must comply with laws, regulations, and safety measures, especially for high-risk applications. Contact information for Renesas Electronics sales offices worldwide is provided.
- Application NotePDF 312 KB an1954 Feb 02, 2007AI-generated Summary: The document presents simulation and characterization results of the ISL70003SEH soft-start and load transient response under a 6A load, including inductor current, output voltage, and loop response curves. It includes detailed performance graphs comparing characterized and simulated data. Additionally, it outlines important legal notices and disclaimers regarding product use, liability, quality grades, safety responsibilities, environmental compliance, and export regulations. Contact information for Renesas Electronics sales offices worldwide is provided.
- Application NotePDF 583 KB an1915 Feb 02, 2007AI-generated Summary: The document presents simulation performance curves illustrating overcurrent and hiccup responses in inductor current and output voltage. It compares characterized and simulated responses, including loop response frequency characteristics. The notice section details Renesas Electronics’ disclaimers on product usage, liability, intellectual property rights, quality grades, safety responsibilities, environmental compliance, and legal restrictions. Contact information for global Renesas sales offices is also provided.
- Application NotePDF 338 KB an9867 Nov 10, 1999AI-generated Summary: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- Application NotePDF 224 KB an9654 May 05, 1999AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
Recommended Documents (1)
Datasheets (1)
- Manual - Development ToolsPDF 912 KB isl70003asehev2z-user-guide Oct 20, 2017
Manuals & Guides (2)
- White PaperPDF 254 KB using-a-switching-regulator-as-vtt-terminator Aug 10, 2018DDR memory adoption in satellite systems demands a robust VTT rail solution. The ISL70003SEH, a radiation-hardened sync buck regulator, meets this need with superior performance under all radiation conditions. Designed for VTT termination and VREF tracking, it enables DDR benefits in space without extra shielding or testing, ensuring reliable, class-leading power management for mission life.
- Application NotePDF 304 KB an1947 Jan 05, 2009AI-generated Summary: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages from improper use, and restricts unauthorized modifications. Products are categorized into Standard and High Quality grades with specific application scopes. Users must comply with laws, regulations, and safety measures, especially for high-risk applications. Contact information for Renesas Electronics sales offices worldwide is provided.
- Application NotePDF 312 KB an1954 Feb 02, 2007AI-generated Summary: The document presents simulation and characterization results of the ISL70003SEH soft-start and load transient response under a 6A load, including inductor current, output voltage, and loop response curves. It includes detailed performance graphs comparing characterized and simulated data. Additionally, it outlines important legal notices and disclaimers regarding product use, liability, quality grades, safety responsibilities, environmental compliance, and export regulations. Contact information for Renesas Electronics sales offices worldwide is provided.
- Application NotePDF 583 KB an1915 Feb 02, 2007AI-generated Summary: The document presents simulation performance curves illustrating overcurrent and hiccup responses in inductor current and output voltage. It compares characterized and simulated responses, including loop response frequency characteristics. The notice section details Renesas Electronics’ disclaimers on product usage, liability, intellectual property rights, quality grades, safety responsibilities, environmental compliance, and legal restrictions. Contact information for global Renesas sales offices is also provided.
- Application NotePDF 338 KB an9867 Nov 10, 1999AI-generated Summary: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.View More (6)
Application Notes & White Papers (6)
- End Of Life NoticePDF 297 KB PLC17007A Feb 21, 2017
- End Of Life NoticePDF 292 KB PLC17007 Feb 15, 2017
Product Notices (PCN, EOL, etc) (2)
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Marketing Collateral (1)
- ReportPDF 398 KB isl70003seh-neutron-test-report Jun 18, 2015
- Technical BriefPDF 410 KB tb499 Jun 16, 2011
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Radiation Hardened Power Solution for RTG4 FPGA
Over the last decade, satellites and spacecraft have seen an exponential increase in the need for onboard data processing and storage demands. Additionally, major satellite manufacturers have recently announced their latest satellites to be modular, fully digital, and capable of in-orbit... Read More
Knowledge Base
-
Is the ISL70003ASEH a drop in replacement for the ISL70003SEH?
Question: If I have already designed in the ISL70003SEH, will I need to make any changes to my board or components to replace this with the ISL70003ASEH? Answer: No, you will not have to make any changes to your layout or other components.