In recent years, the space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride (GaN) FETs as power stages. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Renesas has developed a radiation hardened 100V GaN FET + integrated low-side driver to efficiently drive the GaN FETs used in these power systems. These plastic-packaged, radiation hardened GaN FET + drivers are used for DC/DC power supplies in many different mission types.
Product Selector: Rad Hard Plastic GaN FETs
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Product SelectorDocumentation
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| Type | Title | Date |
| Brochure | PDF 5.02 MB | |
| Technical Brief | PDF 229 KB | |
| White Paper | PDF 470 KB 日本語 | |
| White Paper | PDF 405 KB | |
| Application Note | PDF 338 KB | |
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Radiation-Tolerant Plastic-Package ICs Overview
Learn about Renesas's family of radiation-tolerant plastic-package ICs designed to support the emerging field of small satellites that will provide solutions such as high-speed Internet connections to hundreds of millions of users in communities, governments, and businesses worldwide. These ICs deliver rad-tolerance performance at a much lower cost point versus radiation assurance tested Class V (space level) products.
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