Overview

Description

The F5268 is an eight-channel TRX silicon IC designed for dual polarization 5G phased-array applications at n258 band. This device provides more than 15.5dBm linear output power* in silicon for wide-band 5G-NR waveforms.

*Power level with < 3% EVM using 400MHz 5G-NR CP-OFDM waveform

Features

  • 24.25GHz to 27.5GHz operation
  • 8 radiation channels, beam-per-polarization
  • Flexible output power and high efficiency with Dynamic Array Power (DAP™)
  • ArraySense™ technology for real-time monitoring
  • High-speed SPI control with RapidBeam™ technology
  • 5.1mm × 5.1mm, 118-BGA package with exposed-die
  • -40°C to +95°C ambient operating temperature range 

Comparison

Applications

Documentation

Type Title Date
Datasheet - Short-form PDF 58 KB
Datasheet Log in to Download PDF 1.63 MB
Guide PDF 2.24 MB
Product Brief PDF 728 KB
4 items

Design & Development

Boards & Kits

Models

Videos & Training

mmWave 5G Front Ends with Dynamic Array Power (DAP™) Optimization Deliver Differentiated Designs

Tumay delivers an overview of designing mmWave 5G phased arrays and how to differentiate your designs with the unique features of Renesas active beamforming ICs.