Overview
Description
The HIP2100 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.
Features
- Drives N-Channel MOSFET Half Bridge
- SOIC, EPSOIC, and QFN Package Options
- SOIC and EPSOIC Packages Compliant with 100V Conductor Spacing Guidelines of IPC-2221
- Pb-Free (RoHS Compliant)
- Bootstrap Supply Max Voltage to 114VDC
- On-Chip 1Ω Bootstrap Diode
- Fast Propagation Times for Multi-MHz Circuits
- Drives 1000pF Load with Rise and Fall Times Typ 10ns
- CMOS Input Thresholds for Improved Noise Immunity
- Independent Inputs for Non-Half Bridge Topologies
- No Start-Up Problems
- Outputs Unaffected by Supply Glitches, HS Ringing Below Ground, or HS Slewing at High dv/dt
- Low Power Consumption
- Wide Supply Range
- Supply Undervoltage Protection
- 3Ω Driver Output Resistance
- QFN Package:
- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package Footprint, which Improves PCB Efficiency and has a Thinner Profile
Comparison
Applications
- Telecom Half Bridge Power Supplies
- Avionics DC/DC Converters
- Two-Switch Forward Converters
- Active Clamp Forward Converters
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
HIP2100EIBZ Active Samples Available
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|
SOICN-EP | 8 | Tube | 2 | 1.3 | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C | Get Samples, | |
HIP2100EIBZT Active Samples Available
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|
SOICN-EP | 8 | Reel | 2 | 1.3 | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C | 2.52 | Get Samples, |
HIP2100IBZ Active Samples Available
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|
SOICN | 8 | Tube | 1 | 1.3 | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C | 2.23 | Get Samples, |
HIP2100IBZT Active Samples Available
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|
SOICN | 8 | Reel | 1 | 1.3 | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C | 2.227 | Get Samples, |
| QFN | 16 | Tube | 3 | 0.8 | 5.0 x 5.0 x 1.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C | Get Samples, | ||
| QFN | 16 | Reel | 3 | 0.8 | 5.0 x 5.0 x 1.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C | Get Samples, |
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