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Overview

Description

The TSE2004GB2C0 is a digital temperature sensor with integrated 4 Kbit EEPROM for memory modules. It features accuracy up to ±0.5°C and is designed to target applications demanding the highest level of temperature readout.

Features

  • Temperature Sensor + 512 byte serial EEPROM
  • 512 byte serial EEPROM for SPD
  • Single supply: 2.2V to 3.6V
  • Accurate timeout support
    • Meets strict SMBus spec of 25ms (min), 35ms (max)
  • Timeout supported for Temp Sensor and EEPROM
  • Timeout supported in all modes
    • Active mode for Temp Sensor and EEPROM
    • EEPROM in standby or Temp Sensor in shutdown
    • EEPROM in standby and Temp Sensor in shutdown
  • Schmitt trigger and noise filtering on bus inputs
  • 2-wire serial interface: 10kHz to 1MHz max I2C™ /SMBus™
  • Available package: 8-TDFN

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 5.24 MB
End Of Life Notice PDF 1.11 MB
Product Change Notice PDF 964 KB
White Paper PDF 1.08 MB
White Paper PDF 5.22 MB
5 items

Design & Development

Models

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Diagram of ECAD Models

Videos & Training

How DDR4 LRDIMMs Transcend RDIMMs in Today's Enterprise Servers

A white paper authored by IDT (acquired by Renesas) and Micron details research into memory and bandwidth for today's high-performance servers. LRDIMMS and RDIMMS traditionally have been seen as complementary, with the former targeting applications requiring deeper memory and the latter for applications requiring higher bandwidth. 

The introduction of 8-gigabit DRAMS has resulted in a growing number of Internet applications benefiting from both deeper memories and higher bandwidth. This paper shows how 32 GB 2RX4 LRDIMMs transcend similar RDIMMs to meet the needs of today’s data center enterprise servers, by providing an optimal combination of deeper memory and higher data bandwidth, even at mainstream module densities.

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