Overview
Description
Renesas Electronics’ R1EV5801MB is an electrically erasable and programmable ROM organized as 131072-word × 8-bit. It has realized High-Speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster.
Features
- Single voltage supply: 2.7 V to 5.5 V
- Access time: 150 ns (max) at Vcc=4.5 V to 5.5 V 250 ns (max) at Vcc=2.7 V to 5.5 V
- Power dissipation Active: 20 mW/MHz, (typ) Standby: 110 μW (max)
- On-chip latches: address, data, CE, OE, WE
- Automatic byte write: 10 ms (max)
- Automatic page write (128 bytes): 10 ms (max)
- Data polling and RDY/Busy
- Data protection circuit on power on/off
- Conforms to JEDEC byte-wide standard
- Reliable CMOS with MONOS cell technology
- 10⁴ or more erase/write cycles
- 10 or more years data retention
- Software data protection
- Write protection by RES pin
- Temperature range: -40 to +85°C
- There are lead free products.
Comparison
Applications
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
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