Overview

The 71V3576 3.3V CMOS SRAM is organized as 128K x 36. The 71V3576 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.

71V3576 - Block Diagram
71V3576 - Block Diagram
  • High system speed 150MHz (3.8ns clock access time)
  • LBO input selects interleaved or linear burst mode
  • Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx)
  • 3.3V core power supply
  • Power down controlled by ZZ input
  • 3.3V I/O
  • Available in 100-pin TQFP package

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Lead Count (#)
    Temp. Grade
    Pb (Lead) Free
    Carrier Type
    Moisture Sensitivity Level (MSL)
    Price (USD) | 1ku
    Buy / Sample
    Part Number
    71V3576S133PFG
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    		TQFP 100 C Yes Tray 3 6.403
    71V3576S133PFGI
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    		TQFP 100 I Yes Tray 3 7.506
    71V3576S150PFGI
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    		TQFP 100 I Yes Tray 3 7.506
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