Overview

Description

The TP65H035G4WSQA 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using our GenIV platform. Using proprietary technology, resulting in reduced internal package inductance and a simplified assembly process. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The device is also automotive-qualified to 175°C, having passed the AEC-Q101 stress tests for automotive-grade discrete semiconductors.

Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge. 

The TP65H035G4WSQA is offered in an industry-standard 3-lead TO-247 with a common source package configuration.

Features

  • AEC-Q101 qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Intrinsic lifetime tests
    • Wide gate safety margin
    • Transient over-voltage capability
  • Enhanced inrush current capability
  • Very low QRR
  • Reduced crossover loss
  • Enables AC-DC bridgeless totem-pole PFC designs
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Achieves increased efficiency in both hard- and soft-switched circuits
  • Easy to drive with commonly-used gate drivers
  • GSD pin layout improves high speed design
  • RoHS-compliant and Halogen-free packaging

Comparison

Applications

Applications

  • Automotive
  • Datacom
  • Broad industrial
  • PV inverter
  • Servo motor

Documentation

Type Title Date
Datasheet PDF 1.19 MB
1 item

Design & Development

Models