Overview

The TP65H035G4YS 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas' Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Renesas GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H035G4YS is offered in an industry-standard TO-247-4 with a Kelvin source and common source package configuration.

TP65H035G4YS Typical Diagram
TP65H035G4YS Simplified Half-bridge Schematic
TP65H035G4YS Typical Diagram
TP65H035G4YS Simplified Half-bridge Schematic
  • Gen IV technology
  • JEDEC-qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Wide gate safety margin
    • Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • RoHS-compliant and Halogen-free packaging
  • Achieves increased efficiency in both hard- and soft-switched circuits
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Easy to drive with commonly used gate driver
  • Kelvin source for improved performance

Applications

  • Datacom
  • Broad industrial
  • PV inverter
  • Servo motor

Documentation

= Featured Documentation
Type Title Date
Datasheet
TP65H035G4YS Datasheet
PDF 955 KB
1 item

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

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    Carrier Type
    Moisture Sensitivity Level (MSL)
    Mounting Type
    Temp. Range
    Buy / Sample
    Part Number
    TP65H015G5WS
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    		TO-247 Tube 1 Through Hole -55 to +150°C
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