Overview

The TP65H050G4WS 650V 50mΩ Gallium Nitride (GaN) FET is a normally-off device built using our GenIV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.

Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge. 

The TP65H050G4WS is offered in an industry-standard 3-lead TO-247 with a common source package configuration.

TP65H050G4WS Typical Diagram
TP65H050G4WS Efficiency
TP65H050G4WS Power Loss
TP65H050G4WS Typical Diagram
TP65H050G4WS Efficiency
TP65H050G4WS Power Loss
  • JEDEC-qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Intrinsic lifetime tests
    • Wide gate safety margin
    • Transient over-voltage capability
  • Enhanced inrush current capability
  • Very low QRR
  • Reduced crossover loss
  • Enables AC-DC bridgeless totem-pole PFC designs
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Achieves increased efficiency in both hard- and soft-switched circuits
  • Easy to drive with commonly-used gate drivers
  • GSD pin layout improves high speed design
  • RoHS-compliant and Halogen-free packaging

Applications

  • Datacom
  • Broad industrial
  • PV inverter
  • Servo motor

Documentation

= Featured Documentation
Type Title Date
Datasheet
TP65H050G4WS Datasheet
PDF 1.19 MB
1 item

Design & Development

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ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

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Diagram of ECAD Models

Product Options

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    Carrier Type
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    Part Number
    TP65H050G4WS
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    		TO-247 Tube 3 Through Hole -55 to +150°C
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