Overview
Description
The TP65H70G4PS 650V 72mΩ Gallium Nitride (GaN) FET is a normally-off device built using our Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H070G4PS is offered in an industry-standard TO-220 with a common source package configuration.
Features
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- Enables AC-DC and DC-DC designs
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly-used gate drivers
- RoHS-compliant and Halogen-free packaging
Comparison
Applications
- Datacom
- Broad industrial
- PV inverter
- Servo motor
- Computing
- Consumer
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 918 KB | |
| Application Note | PDF 372 KB | |
| Application Note | PDF 639 KB | |
| Application Note | PDF 676 KB | |
| Guide | PDF 225 KB | |
| Guide | PDF 273 KB | |
| Guide | PDF 391 KB | |
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Design & Development
Software & Tools
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| TO-220 | Tube | 1 | Through Hole | -55 to +150°C |
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