Overview

The TP65H70G4PS 650V 72mΩ Gallium Nitride (GaN) FET is a normally-off device built using our Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge. 

The TP65H070G4PS is offered in an industry-standard TO-220 with a common source package configuration.

TP65H070G4PS Typical Diagram
TP65H070G4PS Efficiency
TP65H070G4PS Power Loss
TP65H070G4PS Typical Diagram
TP65H070G4PS Efficiency
TP65H070G4PS Power Loss
  • JEDEC-qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Intrinsic lifetime tests
    • Wide gate safety margin
    • Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • Enables AC-DC and DC-DC designs
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Achieves increased efficiency in both hard- and soft-switched circuits
  • Easy to drive with commonly-used gate drivers
  • RoHS-compliant and Halogen-free packaging

Applications

  • Datacom
  • Broad industrial
  • PV inverter
  • Servo motor
  • Computing
  • Consumer

Documentation

= Featured Documentation
Type Title Date
Datasheet
TP65H070G4PS Datasheet
PDF 918 KB
1 item

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

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    Carrier Type
    Moisture Sensitivity Level (MSL)
    Mounting Type
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    Part Number
    TP65H070G4PS
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    		TO-220 Tube 1 Through Hole -55 to +150°C
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