Overview
Description
The TP65H150G4LSGBE 650V 150mΩ Gallium Nitride (GaN) FET, housed in an 8x8 PQFN industry-standard package, is a normally-off device built on Renesas' Gen IV SuperGaN® platform. It integrates a high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, delivering exceptional performance, standard drive compatibility, ease of adoption, and enhanced reliability.
Features
- 150mOhm, 650V GaN Device in PQFN 8x8 industry package
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design defined by:
- 800V transient over-voltage capability
- Operation with E-mode Gate drivers without the need for Zener protection
- Low QRR
- Reduced crossover loss
- Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
- Increased power density
- Reduced system size and weight
- Overall reduction in system cost
Comparison
Applications
- Consumer
- Power adapters
- Low power SMPS
- Lighting
- POE Power
Design & Development
Software & Tools
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Product Options
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