Overview

The TP65H300G4JSGB 650V 240mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Renesas GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H300G4JSGB is offered in an industry-standard PQFN56 with a Kelvin source and common source package configuration.

TP65H300G4JSGB Typical Diagram
TP65H300G4JSGB Typical Diagram
  • Gen IV technology
  • JEDEC-qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Wide gate safety margin
    • Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • RoHS-compliant and Halogen-free packaging
  • Achieves increased efficiency in both hard- and soft-switched circuits
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Easy to drive with commonly-used gate drivers
  • Kelvin source for improved performance
  • Pin-to-pin Drop-in with e-mode GaN FET

Applications

  • Consumer
  • Power adapters
  • Low-power SMPS
  • Lighting

Documentation

= Featured Documentation
Type Title Date
Datasheet
TP65H300G4JSGB Datasheet
PDF 909 KB
1 item

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

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Diagram of ECAD Models

Product Options

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    TP65H300G4JSGB
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    		PQFN56 Tape & Reel 3 Surface Mount -55 to +150°C
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