Overview

The TP65H480G4JSG 650V 480mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas' Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H480G4JSG is offered in an industry-standard PQFN56 with a common source package configuration.

  • JEDEC qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Intrinsic lifetime tests
    • Wide gate safety margin
    • Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • Enables AC-DC and DC-DC designs
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Achieves increased efficiency in both hard- and soft-switched circuits
  • Easy to drive with commonly-used gate drivers
  • RoHS-compliant and Halogen-free packaging

Applications

  • Consumer
  • Power adapters
  • Low power SMPS
  • Lighting 

Documentation

= Featured Documentation
Type Title Date
Datasheet
TP65H480G4JSG Datasheet
PDF 948 KB
1 item

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

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Product Options

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    Pkg. Type
    Carrier Type
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    Part Number
    TP65H480G4JSG
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    		PQFN56 Tape & Reel 3 Surface Mount -55 to +150°C
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