Overview
Description
Support is limited to customers who have already adopted these products.
The 2SJ673 is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 31 mΩ MAX. (VGS = −4.0 V, ID = −18 A)
- Low Ciss: Ciss = 4600 pF TYP.
- Built-in gate protection diode
Comparison
Applications
Documentation
Featured Documentation
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Type | Title | Date |
Datasheet | PDF 282 KB | |
Guide | PDF 2.76 MB | |
Guide | PDF 796 KB | |
Application Note | PDF 648 KB 日本語 | |
Brochure | PDF 2.24 MB | |
5 items
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.