Overview
Description
The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.
Features
- Low on-state resistance
RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A)
RDS(on)3 = 20 mΩ MAX. (VGS = −2.5 V, ID = −10 A) - 2.5 V drive available
- Avalanche capability ratings
Comparison
Applications
Documentation
= Featured Documentation
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Type | Title | Date |
Datasheet | PDF 270 KB | |
Application Note | PDF 3.23 MB 日本語 | |
Application Note | PDF 648 KB 日本語 | |
3 items
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.