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Overview

Description

The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance
    RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A)
    RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A)
  • High current rating: ID(DC) = ±110 A

Comparison

Applications

Documentation

Type Title Date
Guide PDF 796 KB
Application Note PDF 3.23 MB 日本語
Application Note PDF 648 KB 日本語
Datasheet PDF 270 KB
4 items

Design & Development

Models

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Diagram of ECAD Models