Overview

Description

The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance
    RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A)
    RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)
  • Low Ciss: Ciss = 5450 pF TYP.
  • Comparison

    Applications

    Documentation

    Type Title Date
    End Of Life Notice PDF 79 KB 日本語
    Application Note PDF 3.23 MB 日本語
    Application Note PDF 648 KB 日本語
    Datasheet PDF 245 KB
    4 items

    Design & Development

    Models