Overview
Description
The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Low on-state resistance
RDS(on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A) - Low input capacitance
Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) - High current
ID(DC) = ±100 A - RoHS Compliant
Comparison
Applications
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 541 KB | |
| Guide | PDF 796 KB | |
| Application Note | PDF 3.23 MB 日本語 | |
| Application Note | PDF 648 KB 日本語 | |
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| MP-25ZK | TO-263 / D2PAK | Embossed Tape | 1.204 | Get Samples, |
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