Overview

The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.

  • Low on-state resistance
    RDS(on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A)
  • Low input capacitance
    Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
  • High current
    ID(DC) = ±100 A
  • RoHS Compliant

Documentation

= Featured Documentation
Type Title Date
Datasheet
N0601N Datasheet
PDF 541 KB
Application Note
Power MOSFET Application Note
PDF 3.23 MB 日本語
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
3 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Standard Pkg. Type
    Carrier Type
    Price (USD) | 1ku
    Buy / Sample
    Part Number
    N0601N-ZK-E1-AY
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    Samples Available
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    		MP-25ZK TO-263 / D2PAK Embossed Tape 1.204 Get Samples,
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