Overview
Description
The NP20P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Super low on-state resistance RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 64 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
- Low input capacitance Ciss = 1650 pF TYP.
- Built-in gate protection diode
Comparison
Applications
Documentation
= Featured Documentation
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Type | Title | Date |
Datasheet | PDF 1.31 MB | |
Guide | PDF 2.65 MB | |
Application Note | PDF 3.23 MB 日本語 | |
Product Reliability Report | PDF 224 KB | |
Application Note | PDF 648 KB 日本語 | |
Brochure | PDF 2.24 MB | |
6 items
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.