Overview
Description
The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Low on-state resistance RDS(on) = 47 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on) = 64 mΩ MAX. (VGS = –5 V, ID = –10 A) RDS(on) = 70 mΩ MAX. (VGS = –4.5 V, ID = –10 A)
- Logic level drive type
- Gate to Source ESD protection diode built in
- Designed for automotive application and AEC-Q101 qualified
Comparison
Applications
Documentation
Featured Documentation
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Type | Title | Date |
Datasheet | PDF 120 KB | |
Guide | PDF 2.76 MB | |
Guide | PDF 796 KB | |
Application Note | PDF 3.23 MB 日本語 | |
Product Reliability Report | PDF 222 KB | |
Application Note | PDF 648 KB 日本語 | |
Brochure | PDF 2.24 MB | |
7 items
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.