Overview

The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

  • Low on-state resistance RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)
  • Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON

Documentation

= Featured Documentation
Type Title Date
Datasheet
NP23N06YDG Data Sheet
PDF 219 KB
Guide
Power Discretes Part Number Guide
PDF 2.65 MB
Application Note
Power MOSFET Application Note
PDF 3.23 MB 日本語
Product Reliability Report
NP-Series USMO4Nch-HSON8S Reliability Report for AEC-Q101
PDF 223 KB
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
Brochure
Power MOSFET & IPD
PDF 2.24 MB
6 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Standard Pkg. Type
    Carrier Type
    Moisture Sensitivity Level (MSL)
    Buy / Sample
    Part Number
    NP23N06YDG-E1-AY
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    Samples Available
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    		HSON Power SON-8 5x6 Embossed Tape 1 Get Samples,
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