Overview
Description
NP29N06QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Super low on-state resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 15 A)
- Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON dual
Comparison
Applications
Documentation
= Featured Documentation
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Type | Title | Date |
Datasheet | PDF 479 KB | |
Guide | PDF 2.65 MB | |
Application Note | PDF 3.23 MB 日本語 | |
Product Reliability Report | PDF 222 KB | |
Application Note | PDF 648 KB 日本語 | |
Brochure | PDF 2.24 MB | |
6 items
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.