Overview

Description

NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 7.5 A)
  • Low Ciss: Ciss = 1500 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON dual

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 476 KB
Guide PDF 2.65 MB
Application Note PDF 3.23 MB 日本語
Product Reliability Report PDF 222 KB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
6 items

Design & Development

Boards & Kits

Models