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Overview

Description

The NP36P04SDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 17.0 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 23.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A)
  • Low input capacitance Ciss = 2800 pF TYP.

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 1.31 MB
Guide PDF 2.76 MB
Guide PDF 796 KB
Application Note PDF 3.23 MB 日本語
Product Reliability Report PDF 224 KB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
7 items

Design & Development

Models

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Diagram of ECAD Models