Overview
Description
The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Low on-state resistance RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A)
- Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS = 0 V)
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON
Comparison
Applications
Documentation
= Featured Documentation
Log in required to subscribe
|
|
|
---|---|---|
Type | Title | Date |
Datasheet | PDF 230 KB | |
Guide | PDF 2.65 MB | |
Application Note | PDF 3.23 MB 日本語 | |
Product Reliability Report | PDF 222 KB | |
Application Note | PDF 648 KB 日本語 | |
Brochure | PDF 2.24 MB | |
6 items
|
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.