Overview

The NP50P06SDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

  • Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS = −4.5 V, ID = −25 A)
  • Low input capacitance Ciss = 5000 pF TYP.

Documentation

= Featured Documentation
Type Title Date
Datasheet
NP50P06SDG Datasheet
PDF 1.32 MB
Guide
Power Discretes Part Number Guide
PDF 2.65 MB
Application Note
Power MOSFET Application Note
PDF 3.23 MB 日本語
Product Reliability Report
NP-Series USMO4Pch-MP3 Reliability Report for AEC-Q101
PDF 224 KB
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
Brochure
Power MOSFET & IPD
PDF 2.24 MB
6 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Standard Pkg. Type
    Carrier Type
    Moisture Sensitivity Level (MSL)
    Price (USD) | 1ku
    Buy / Sample
    Part Number
    NP50P06SDG-E1-AY
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    Samples Available
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    		MP-3ZK TO-252 / DPAK Embossed Tape 1 0.9496 Get Samples,
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