Overview
Description
The RBA250N04AHPF-4UA01 is an N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed for high current switching applications.
Features
- Super low on-state resistance
- RDS(on) = 0.85 mΩ MAX. (VGS = 10 V, ID = 125A)
- Low input capacitance
- Ciss = 12900pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
- Pb-free (This product does not contain Pb in the external electrode)
Comparison
Applications
Documentation
= Featured Documentation
Log in required to subscribe
|
|
|
---|---|---|
Type | Title | Date |
Datasheet | PDF 639 KB | |
Guide | PDF 2.65 MB | |
Application Note | PDF 3.23 MB 日本語 | |
Application Note | PDF 648 KB 日本語 | |
Brochure | PDF 2.24 MB | |
5 items
|
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.