Overview
Description
The REXFET-1 100V technology, featuring a split gate structure, offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to offer high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for Automotive applications such as power management systems, motor control, and DC-DC converters.
Features
- Standard level gate drive voltage: VGS(th) = 2.0V to 4.0V
- Super low on-state resistance: RDS(on) = 0.65mΩ max
- Low input capacitance
- Designed for automotive application and AEC-Q101 (HTRB, HTGB) qualified
Comparison
Applications
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 313 KB | |
| Product Reliability Report | PDF 382 KB | |
| Guide | PDF 2.76 MB | |
| Guide | PDF 796 KB | |
| Application Note | PDF 722 KB | |
| Application Note | PDF 3.23 MB 日本語 | |
| Application Note | PDF 648 KB 日本語 | |
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
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