Evaluation Board for F1912 6-bit Digital Step Attenuator
The F1912EVBI is a fully populated evaluation board which allows the customer to easily evaluate the F1912 digital step attenuator. Attenuation may be set using either...
Overview
Description
The F1912 Glitch-Free™ Digital Step Attenuator (DSA) offers very high reliability due to its monolithic silicon die construction in a compact 4mm x 4mm 20-pin package QFN package. The silicon design has very low insertion loss and low distortion (> +60dBm IP3I.) The device has pinpoint accuracy and settles to a final attenuation value within 400nsec. Most importantly, the F1912 includes Renesas' Glitch-Free technology which results in low overshoot and ringing during MSB transitions.
Features
- Serial and 6-bit parallel interface
- 31.5dB control range
- 0.5dB step
- Glitch-Free™, low transient overshoot
- Attenuation error < 0.22dB at 2GHz
- Low insertion loss < 1.4dB at 2GHz
- Ultra linear >+63dBm IP3I
- 500ns switching speed
- Stable integral non-linearity over temperature
- 3.0V to 5.25V supply
- 1.8V or 3.3V control logic
- -55 °C to +105 °C operating temperature
- 4mm x 4mm thin QFN 20-pin package
- Low current consumption 550µA typ.
Comparison
Applications
Applications
- Base Station 2G, 3G, 4G, TDD Radio Cards
- Repeaters and E911 systems
- Digital Pre-Distortion
- Point-to-Point Infrastructure
- Public Safety Infrastructure
- WiMAX Receivers and Transmitters
- Military Systems, JTRS Radios
- RFID Handheld and Portable Readers
- Cable Infrastructure
Documentation
= Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 1.47 MB | |
| Guide | PDF 2.24 MB | |
| Guide | PDF 2.83 MB | |
| Report | PDF 517 KB | |
| Product Brief | PDF 1.07 MB | |
| Product Change Notice | PDF 25 KB | |
| Application Note | PDF 556 KB | |
| Product Change Notice | PDF 37 KB | |
| Product Change Notice | PDF 45 KB | |
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Design & Development
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Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| VFQFPN | 20 | I | Yes | Tray | 1 | 3.443 | Get Samples, | |
| VFQFPN | 20 | I | Yes | Reel | 1 |
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Videos & Training
IDT RF Product Benefits Overview
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
Video List
News & Blog Posts
| News | May 26, 2015 |
