Overview
Description
The IDT F1162 dual channel device is designed to operate with a single 5V supply. It is optimized for operation in a Multi-carrier BaseStation Receiver for LTE and TDD RF bands from 2300 - 2700 MHz with either Side Injection. IF frequencies from 50 to 500 MHz are supported. Nominally, the device offers +43 dBm Output IP3 with 335 mA of ICC. Alternately one can adjust 4 resistor values and a toggle pin to run the device in low current mode with +38 dBm Output IP3 and 230 mA of ICC.
A member of IDT’s Zero-Distortion™ family, this RF to IF mixer reduces distortion for improved SNR while simultaneously reducing power consumption.
Features
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Zero-DistortionTM technology for LTE/TDD bands
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2300 to 2700 MHz freq range\Ideal for Multi-Carrier Systems
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8.9 dB Gain
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Ultra linear +43 dBm IP3O
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Low NF < 10 dB
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200 Ω output impedance
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Ultra high +13 dBm P1dBI
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Pin Compatible w/existing solutions
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6x6mm 36-pin package
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Power Down mode
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~ 150 nsec settling from Power Down
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Constant LO Port Z in STBY mode
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Low Current Mode : ICC = 230 mA
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Standard Mode: ICC = 330 mA
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Can use with Low Side or High Side Injection
Comparison
Applications
Documentation
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| Type | Title | Date |
| Datasheet | PDF 3.39 MB | |
| Product Change Notice | PDF 674 KB | |
| Guide | PDF 2.24 MB | |
| Product Brief | PDF 1.12 MB | |
| Application Note | PDF 369 KB | |
| Product Change Notice | PDF 39 KB | |
| Product Change Notice | PDF 35 KB | |
| Product Change Notice | PDF 33 KB | |
8 items
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Design & Development
Available Modular Designs by X-Microwave:
XM-A7E4-0409D Mixer
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
| VFQFPN | 36 | I | Yes | Tray | 1 | 9.654 | Get Samples, | |
| VFQFPN | 36 | I | Yes | Reel | 1 |
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Videos & Training
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
