Evaluation Board for High Reliability SPDT Absorptive RF Switch
The F2970EVBI is a fully populated, enabling easy RF evaluation of the product.
“Thru” calibration connectors are conveniently located on the eval board to simplify...
Overview
Description
The F2970 is a rugged, low insertion loss, 75Ω SP2T (SPDT) absorptive RF switch designed for a wide range of CATV and broadband RF applications. This device covers a broad frequency range from 5MHz to 3000MHz. In addition to having excellent linearity and isolation performance, it also provides a 75Ω termination to the isolated RF port.
Features
- Single-pole double-throw (SPDT) with absorptive terminations on the isolated port
- Leading performance RF over 5MHz to 3000MHz
- Isolation: 68dB at 1200MHz
- Insertion Loss: 0.32dB at 1200MHz
- High continuous RF CW power handling at 85 °C
- Selected RF path: 27dBm
- Terminated RF path: 24dBm
- High linearity:
- IIP2/IIP3: 95dBm/63dBm
- CSO and CTB: -90dBc
- Single 2.70V to 3.60V supply voltage
- 3.3V and 1.8V compatible control logic
- Operating temperature -40 °C to +105 °C
- 4mm × 4mm 20-pin LQFN package
Comparison
Applications
Documentation
= Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 3.69 MB | |
| Guide | PDF 2.24 MB | |
| Report | PDF 517 KB | |
| Product Brief | PDF 438 KB | |
| Application Brief | PDF 686 KB | |
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Design & Development
Boards & Kits
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| VFQFPN | 20 | K | Cut Tape | 1 | 1.755 | Get Samples, | |
| VFQFPN | 20 | K | Reel | 1 |
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- Document icon next to product name in row: View the featured document for this product
- Chip icon next to the right of the document icon in row: View the block diagram for this product
- Cart icon to the right of the chip icon: Indicates that samples are available for this product
Videos & Training
IDT RF Product Benefits Overview
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
Video List
News & Blog Posts
| News | Dec 5, 2016 | ||
| News | Oct 20, 2015 |
