Evaluation System for the F4481 DIFF-In / SE-Out Quad Path TX DVGA
The F4481EVS is the evaluation system that enables customers to evaluate the F4481 DIFF-In/SE-Out Quad Path TX DVGA 400MHz to 1100MHz.
For more information, please...
Overview
Description
The F4481 is a 400MHz to 1100MHz quad path TX Digital Variable Gain Amplifier (DVGA) outfitted with 100Ω differential inputs and 50Ω single-ended outputs. The device is part of a complete family of VGAs targeting Frequency Division Duplex (FDD) or Time Division Duplex (TDD) applications within the 400MHz to 4200MHz frequency range. Using a single 3.3V power supply and only 520mA of ICC, the F4481 provides four independent transmit paths, each with 28dB typical maximum gain, +35dBm OIP3, +17dBm output P1dB, and 5.7dB NF. Each channel includes a Glitch-Free™ digital step attenuator that reduces gain by up to 31.5dB in precise 0.5dB steps.
The F4481 is packaged in an 8mm × 8mm 56-LGA, with matched 100Ω differential input and 50Ω single-ended output impedances for ease of integration into the signal path.
Features
- Independent quad channels for FDD TX applications
- 400MHz to 1100MHz
- 28dB typical max gain at 900MHz
- Precise SPI-controlled Glitch-Free™ gain adjustment
- 31.5dB gain range with 0.5dB step size
- 5.7dB NF at 900MHz
- +35dBm OIP3 at 900MHz
- +17dBm output P1dB at 900MHz
- 3.3V supply voltage
- ICC = 524mA
- 100Ω differential input impedances
- 50Ω single-ended output impedances
- 1.8V and 3.3V logic support
- Independent channel standby modes for power savings
- Operating temperature (TEP) range: -40 °C to +115 °C
- 8mm × 8mm, 56-LGA package
Comparison
Applications
Applications
- 4G and 5G multi-mode, multi-carrier transmitters
- LTE and UMTS/WCDMA base stations
- Active antenna systems
- Digital radio
Documentation
= Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 3.19 MB | |
| Guide | PDF 2.24 MB | |
| Guide | PDF 2.83 MB | |
| Product Brief | PDF 506 KB | |
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Design & Development
Software & Tools
Boards & Kits
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| LGA | 56 | I | Yes | Tray | 3 | 22.94 | Get Samples, | |
| LGA | 56 | I | Yes | Reel | 3 |
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Videos & Training
IDT RF Product Benefits Overview
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
Video List