Renesas' power discrete devices focus on high power applications in automotive and industrial by IGBT/Power MOSFET. Renesas plans to broaden its portfolio by focusing on a wide range of compound devices such as SiC and GaN.
Categories
GaN Power Discretes
Power discretes with improved efficiency over silicon
Power Diodes
Offer quick recovery times for rectification in very high frequency applications
Power IGBTs (Insulated Gate Bipolar Transistors)
Low saturation voltage and fast switching through thin wafer technology
Power MOSFETs
MOSFETs for low on-resistance, high-speed switching and high-robustness
Power Thyristors & Triacs
Triac and thyristor with a guaranteed junction temperature (Tj) of 150 °C