Renesas' Power Discrete devices focus on mid-power to high-power applications in infrastructure, automotive, and industrial markets. We provide a broad range of MOSFETs in industry-standard packages, along with a growing portfolio of 650V and 700V Gallium Nitride (GaN) FETs, implemented in the most popular industry-standard packages.
Categories
GaN Power Discretes
Power discretes with improved efficiency over silicon
Power Diodes
Offer quick recovery times for rectification in very high frequency applications
Power IGBTs (Insulated Gate Bipolar Transistors)
Low saturation voltage and fast switching through thin wafer technology
Power MOSFETs
MOSFETs for low on-resistance, high-speed switching and high-robustness
Power Thyristors & Triacs
Triac and thyristor with a guaranteed junction temperature (Tj) of 150 °C