The TP65H070G4LSG 650V 72mΩ Gallium Nitride (GaN) FET is a normally-off device built using our Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H070G4LSG is offered in a performance PQFN88 with a common source package configuration.
The TDHBG1200DC100 1.2 kW half-bridge evaluation board provides the elements of a simple buck or boost converter for basic study of switching characteristics and...
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
| PQFN88 | Tape & Reel | 3 | Surface Mount | -55 to +150°C |
