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Overview

Description

The N0602N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance
    RDS(on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A)
  • Low input capacitance
    Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
  • High current
    ID(DC) = ±100 A
  • RoHS Compliant

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 485 KB
Brochure PDF 12.71 MB 日本語
Guide PDF 796 KB
Application Note PDF 3.23 MB 日本語
Application Note PDF 648 KB 日本語
5 items

Design & Development

Models

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Diagram of ECAD Models