Overview
Description
The F1478 is a high-gain, two-stage RF amplifier designed to operate within the 1800MHz to 5000MHz frequency range. Using a single 5V power supply and with low ICC, the F1478 provides 29.6dB of gain (which can be optimized vs. bandwidth) and 1.8dB of noise figure. The F1478 realizes up to +37.3dBm OIP3 and 25.5dBm OP1dB at 3550MHz. The F1478 is packaged in a 3mm × 3mm, 16-VFQFPN, with matched 50Ω input and output impedances for ease of integration into the signal path. The silicon integration approach means that external BOM components are minimized for customer applications.
Features
- RF range: 1800MHz to 5000MHz
- 29.6dB typical gain at 3550MHz (can be optimized vs. bandwidth)
- 1.8dB NF at 3550MHz
- Adjustable OIP3 performance
- +37.3dBm OIP3 at 3550MHz and 140mA of bias current
- +33.8dBm OIP3 at 3550MHz and 100mA of bias current
- Adjustable OP1dB Performance
- +25.5dBm OP1dB at 3550MHz and 140mA of bias current
- +24.5dBm OP1dB at 3550MHz and 100mA of bias current
- 5V power supply
- Adjustable ICC ranging from 80mA to 160mA
- 50Ω single-ended input and output impedances
- 1.8V Logic compatible standby mode for power savings
- Operating temperature (TEPAD) range: -40 °C to +115 °C
- 3mm × 3mm 16-VFQFPN package
Comparison
Applications
Applications
- 4G/5G cellular base stations
- Multi-mode, multi-carrier transmitters
- Active antenna systems
Documentation
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|---|---|---|
| Type | Title | Date |
| Datasheet | PDF 20.81 MB | |
| Guide | PDF 2.24 MB | |
| Product Brief | PDF 983 KB | |
| Product Change Notice | PDF 103 KB | |
| Product Change Notice | PDF 5.71 MB | |
| Product Change Notice | PDF 5.61 MB | |
| Application Note | PDF 1.75 MB | |
| Product Change Notice | PDF 255 KB | |
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
| VFQFPN | 16 | A | Yes | Tray | 3 | Get Samples, | |
| VFQFPN | 16 | A | Yes | Reel | 3 |
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Videos & Training
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
News & Blog Posts
| News | Feb 28, 2019 | ||
| News | Dec 17, 2015 |
