Evaluation Board for F1958 7-bit Digital Step Attenuator
The F1958EVB is a fully populated evaluation board which allows the customer to easily evaluate the digital step attenuator. Attenuation may be set using either the...
Overview
Description
The F1958 is part of Renesas' Glitch-Free™ family of digital step attenuators (DSAs) optimized for the demanding requirements of base station (BTS) radio cards and numerous other applications. This device is offered in a compact 4mm × 4mm 24-VFQFPN package with 50Ω input and output impedance for ease of integration into the radio or RF system. The F1958 offers very high reliability due to its construction from a monolithic silicon die and has very low insertion loss with minimal distortion. Additionally, the device is designed to have extremely accurate attenuation levels. These accurate attenuation levels improve system SNR and/or ACLR by ensuring system gain is as close to the targeted level as possible. In addition, the very fast settling time in parallel mode is ideal for fast switching systems. Finally, the device uses our Glitch-Free™ technology in contrast to competing DSAs.
Features
- Serial and 7-bit parallel interface
- 31.75dB range
- 0.25dB steps
- Glitch-Free™: Low transient overshoot
- 500ns settling time for 0.25dB steps
- Ultra-linear > 63dBm IIP3
- Low insertion loss < 1.7dB at 4GHz
- Attenuation error < ±0.2dB at 4GHz
- Bidirectional RF use
- 3.3V or 5V supply
- -40 °C to +105 °C operating temperature
- 4mm × 4mm 24-VFQFPN package
Comparison
Applications
Applications
- 3G/4G/4G+ Base Station Systems
- Distributed Antenna Systems, DAS
- Remote Radio Heads
- Active Antenna Systems, AAS Broadband Satellite Equipment
- NFC Infrastructure
- Military Communication Equipment
Documentation
= Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 9.53 MB | |
| Guide | PDF 2.24 MB | |
| Guide | PDF 2.83 MB | |
| Product Change Notice | PDF 726 KB | |
| Product Change Notice | PDF 76 KB | |
| Product Brief | PDF 1.07 MB | |
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Design & Development
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Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| VFQFPN | 24 | K | Yes | Tray | 1 | 4.666 | Get Samples, | |
| VFQFPN | 24 | K | Yes | Reel | 1 | 4.195 |
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Videos & Training
IDT RF Product Benefits Overview
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
Video List
News & Blog Posts
| News | May 26, 2015 |
