Evaluation Board for F0440 Dual Matched Broadband RF DVGA
The F0440EVB is a fully populated evaluation board which allows the customer to easily evaluate the F0440 Dual Matched Broadband RF DVGA. The attenuation setting may be...
Overview
Description
The F0440 400MHz to 2700MHz dual RF digital variable gain amplifier (DVGA) is designed for use in receivers. The device provides two independent receiver paths each with 11.6dB typical maximum gain and 4.7dB noise figure in the low-band configuration designed to operate with a single +5V supply. For each path Gain control is split into three separate attenuators; DSA0 is a single 6dB step using a single control pin, DSA1 includes 23dB SPI-controlled gain adjustment in 1dB steps, and DSA2 includes 18dB attenuation in 6dB steps controlled using two control pins. F0440 offers +40dBm nominal output IP3 using 245mA total ICC.
This device is packaged in a 6mm x 6 mm, 36-pin TQFN with 50Ω single-ended RF input and RF output impedances for ease of integration into the signal-path lineup for each of the two paths.
Features
- Dual Path RF amp and DSAs for diversity/MIMO receivers
- RF: 400MHz to 2700MHz
- < 2dB overshoot between DSA transitions
- 11.6dB typical max gain at 900MHz
- DSA0 is a single 6dB coarse step
- DSA1 has 23dB total gain range in 1dB steps
- DSA2 has 18dB gain range in 6dB steps
- +41dBm OIP3 at 2000MHz
- 4.7dB Noise Figure at 900MHz
- +5V supply voltage
- ICC = 245mA
- Independent standby: 7mA standby current
- SPI interface for DSA1
- 1-bit control for DSA0
- -bit control for DSA2
- 50Ω input and output impedance
- Broadband, internally matched
- 6mm x 6mm, 36-pin TQFN package
Comparison
Applications
Applications
- Multi-mode/Multi-carrier receivers
- PCS1900 base stations
- DCS1800 base stations
- WiMAX and LTE base stations
- UMTS/WCDMA 3G base stations
- PHS/PAS base stations
- Distributed antenna systems
- Digital radio
Documentation
= Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 2.92 MB | |
| Guide | PDF 2.24 MB | |
| Guide | PDF 2.83 MB | |
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Design & Development
Software & Tools
Boards & Kits
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| VFQFPN | 36 | I | Yes | Tray | 1 | 6.462 | Get Samples, | |
| VFQFPN | 36 | I | Yes | Reel | 1 |
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Videos & Training
IDT RF Product Benefits Overview
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
Video List