The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.
The ISL70040SEHEV2Z evaluation platform evaluates the ISL70040SEH alongside the ISL70023SEH. The same board can be used to evaluate the ISL73040SEH alongside the
The ISL70040SEHEV3Z evaluation platform is designed to evaluate the ISL70040SEH radiation hardened low side GaN FET driver alongside the ISL70023SEH and ISL70024SEH...
The ISLVERSALDEMO2Z demo board provides the power management for the AMD Xilinx Space Grade Versal ACAP AI Core VC1902 using Renesas' Radiation Hardened Power...
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
| CLCC | Tray | 1 | Not Applicable | Get Samples, | ||
| CLCC | Tray | 25 | Not Applicable | |||
| 100 | ||||||
| PFL | 5 |
