Gallium Nitride (GaN) Power Discretes

Renesas is a pioneer of Gallium Nitride (GaN) power semiconductors, providing reliable high-performance solutions across a wide range of applications, from 25W to 10+kW. With over 20 million high- and low-power devices shipped, our products have accumulated more than 350 billion hours of field usage. This reliability is made possible by a unique and superior architecture that leverages the inherent performance benefits of GaN and offers a diverse selection of package options. Available packages include compact PQFN, robust TO-leaded, and various surface-mount packages with both bottom- and top-side cooling. Such versatility is unattainable with other GaN products due to their inherent design limitations. Our GaN solutions make adoption simpler and more cost-effective for system developers—leveraging robust normally-off architecture, extensive package variety, and an integrated low-voltage silicon MOSFET front end for compatibility with standard silicon drivers.