Overview

The ISL73033SLHM is a radiation hardened 100V Gallium Nitride (GaN) FET with an integrated low-side GaN FET driver. The GaN FET are capable of providing up to 45A output and have an RDSON as low as 7.5mΩ. The integrated low-side GaN FET driver has a supply range from 4.5V to 13.2V and can accept logic levels up to 14.7V, regardless of the supply voltage. The ISL73033SLHM has a propagation delay of 42ns, enabling high switching frequency for better power conversion efficiency. The ISL73033SLHM is characterized over the full military temperature range from -55 °C to +125 °C and receives screening similar to QMLV devices. The device is offered in an 81-lead Ball Grid Array (BGA) plastic package.

ISL73033SLHM - Typical Application
ISL73033SLHM - Block Diagram
ISL73033SLHM - Pin Assignment
ISL73033SLHM - Typical Application
ISL73033SLHM - Block Diagram
ISL73033SLHM - Pin Assignment
  • Production testing and qualification follow AS6294/1
  • 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver
  • Wide driver bias range of 4.5V to 13.2V
  • Up to 16.5V logic inputs (regardless of VDD level)
    • Inverting and non-inverting inputs
  • Integrated driver optimized for enhancement-mode GaN FETs
    • Internal 4.5V regulated gate drive voltage
  • Full military temperature range operation
    • TA = -55 °C to +125 °C
    • TJ = -55 °C to +150 °C
  • Radiation hardness assurance (lot-by-lot)
    • Low dose rate (0.01rad(Si)/s): 75krad(Si)
  • SEE hardness for Driver (see the SEE test report)
    • No SEB/L LETTH, VDD = 16.5V: 86MeV•cm2/mg
    • No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg
  • SEE hardness for GaN FET (see the SEE test report)
    • No SEB/L LETTH, VDS = 100V: 86MeV•cm2/mg

Documentation

= Featured Documentation
Type Title Date
Datasheet
ISL73033SLHM Datasheet
PDF 467 KB
Brochure
Intersil Space Products Brochure
PDF 5.02 MB
Technical Brief
R34ZZ0006: Radiation Hardened Plastic Production and QCI Flow
PDF 229 KB
Report
ISL73033SLHM Total Dose Test Report
PDF 1.31 MB
Report
ISL73033SLHM SEE Test Report
PDF 484 KB
White Paper
Taking Advantage of GaN in Small Satellite “New Space” Applications
PDF 470 KB 日本語
White Paper
Advantages of Using Gallium NitrideFETs in Satellite Applications
PDF 548 KB
White Paper
Wafer by Wafer Low Dose Rate Acceptance White Paper
PDF 533 KB
Application Note
AN9867: End of Life Derating: A Necessity or Overkill
PDF 338 KB
9 items

Design & Development

ISL73033SLHEV1Z Evaluation Board

ISL73033SLHEV1Z

Evaluation
Learn More

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET Evaluation Board

The ISL73033SLHEV1Z evaluation board is used to evaluate the performance of the ISL73033SLH radiation hardened Driver-GaN power stage. The ISL73033SLH integrates a 4.5V...

Featured Documents:
ISL73033SLHEV1Z User Manual

ECAD Models

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Product Options

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