The ISL73033SLHM is a radiation hardened 100V Gallium Nitride (GaN) FET with an integrated low-side GaN FET driver. The GaN FET are capable of providing up to 45A output and have an RDSON as low as 7.5mΩ. The integrated low-side GaN FET driver has a supply range from 4.5V to 13.2V and can accept logic levels up to 14.7V, regardless of the supply voltage. The ISL73033SLHM has a propagation delay of 42ns, enabling high switching frequency for better power conversion efficiency. The ISL73033SLHM is characterized over the full military temperature range from -55 °C to +125 °C and receives screening similar to QMLV devices. The device is offered in an 81-lead Ball Grid Array (BGA) plastic package.
|
|
|
|
|---|---|---|
| Type | Title | Date |
| Datasheet | PDF 467 KB | |
| Brochure | PDF 5.02 MB | |
| Technical Brief | PDF 229 KB | |
| Report | PDF 1.31 MB | |
| Report | PDF 484 KB | |
| White Paper | PDF 470 KB 日本語 | |
| White Paper | PDF 548 KB | |
| White Paper | PDF 533 KB | |
| Application Note | PDF 338 KB | |
9 items
|
||
The ISL73033SLHEV1Z evaluation board is used to evaluate the performance of the ISL73033SLH radiation hardened Driver-GaN power stage. The ISL73033SLH integrates a 4.5V...
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
| FBGA | Tray | 25 | 3 |
