Overview

The RMLV0816BGSD is a family of 8-Mbit static RAMs organized 524, 288-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0816BGSD has realized higher density, higher performance and low power consumption. The RMLV0816BGSD offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 52pin TSOP (II).

  • Single 3V supply: 2.4V to 3.6V
  • Access time: Power supply voltage from 2.7V to 3.6V: 45ns (max.) Power supply voltage from 2.4V to 2.7V: 55ns (max.)
  • Current consumption: Standby: 0.45µA (typ.)
  • Equal access and cycle times
  • Common data input and output Three state output
  • Directly TTL compatible All inputs and outputs
  • Battery backup operation

Documentation

= Featured Documentation
Type Title Date
Datasheet
RMLV0816BGSD-4S2 Datasheet
PDF 337 KB 日本語
Guide
SRAM Shipping Label and Package Marking
PDF 182 KB 日本語
Guide
SRAM Part Number Guide
PDF 471 KB 日本語
Guide
SRAM Soldering and Mounting Conditions
PDF 1.27 MB 日本語
Product Reliability Report
RMLV0816BGSD-4S2 Reliability Report
PDF 202 KB
Package Outline Drawing
Package Drawing TSOP(2) 52pin PTSB0052LD-A
PDF 69 KB
Product Change Notice
SRAM (SOP/uTSOP/SOJ) Assembly Location Change
PDF 1.04 MB 日本語
Product Change Notice
SRAM (SOP/uTSOP/FBGA) Test Location Change
PDF 1.07 MB 日本語
8 items

Design & Development

ECAD Models

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Product Options

    Processing table
    PLP
    Pkg. Type
    Carrier Type
    Moisture Sensitivity Level (MSL)
    Price (USD) | 1ku
    Buy / Sample
    Part Number
    RMLV0816BGSD-4S2#AA1
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    Samples Available
    Buy Now
    		2032 Dec TSOP(2) Tray 3 4.479 Get Samples,
    RMLV0816BGSD-4S2#HA1
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    memory
    view_in_ar
    		2032 Dec TSOP(2) Embossed Tape 3 4.421
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